http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009161434-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
filingDate 2009-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8965f7316c3ab3760109a252d398e97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ee645d738c4e1ffe449b324e08e148a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eae19e0f0b1011c6946253d97fe87423
publicationDate 2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009161434-A
titleOfInvention Group III nitride semiconductor crystal manufacturing method and group III nitride semiconductor crystal
abstract The present invention provides a group III nitride semiconductor crystal manufacturing method and a group III nitride semiconductor crystal that have excellent productivity and excellent crystallinity. An intermediate layer made of at least a group III nitride compound is stacked on a substrate, and a group III nitride semiconductor crystal is formed on the intermediate layer. A pretreatment step in which plasma treatment is performed on the substrate 11 with a treatment time in the range of 30 to 3600 seconds, and then the intermediate layer 12 is formed on the substrate 11 by sputtering. A sputtering process for forming a film is provided. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017500441-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9951442-B2
priorityDate 2006-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID70079
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419545842
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82899
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518864
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11703
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID158605
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426285897
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415745145
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID22627863
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16682930
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447573583
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419514711
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454327959
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520721
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453284447
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419528482
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID123268
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID74123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID66198
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457000845
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID76919
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415807293
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82901
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15051
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449182385
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID157264832
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID101912
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447739086
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518858

Total number of triples: 52.