| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3bad10afafe5e17c5aafb1049696f58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84640e666ece9b1b9dad33c3f2b7a23e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b4988c45605861b1104d7ed08c2a011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8630bde23c1fd492f5e895c69eea28f8 |
| publicationDate |
2009-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009158943-A |
| titleOfInvention |
Method for manufacturing SOI substrate |
| abstract |
An object is to reduce bonding defects when an SOI substrate including a substrate made of an insulator is manufactured. A first SOI substrate in which a first single crystal semiconductor film is provided over a first substrate made of an insulator with a first insulating film interposed therebetween is formed using the same material as the first substrate. A second substrate is formed, a second single crystal semiconductor film is formed over the first single crystal semiconductor film, ions are added to the second single crystal semiconductor film, and a separation layer is formed. A second insulating film functioning as a bonding layer is formed over the single crystal semiconductor film, the surface of the first SOI substrate is opposed to the surface of the second substrate, and the surface of the second insulating film is Heat treatment is performed after bonding the surface of the second substrate, and cleavage is performed with the separation layer as a boundary, so that a part of the second single crystal semiconductor film is formed over the second substrate with the second insulating film interposed therebetween. A provided second SOI substrate is formed. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8258043-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012069817-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012074680-A |
| priorityDate |
2007-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |