http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009152303-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate | 2007-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65d59aa48cdeac764baa5c454b69768 |
publicationDate | 2009-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2009152303-A |
titleOfInvention | Insulating film formation method |
abstract | An insulating film that is suitable for use as a high dielectric constant gate insulating film and can achieve both low EOT and low interface states is formed. A first step of forming a Hf-Si film by sputtering on a Si substrate, a second step of oxidizing the Hf-Si film to form a HfSiO film, and nitriding the HfSiO film. A third step of forming the HfSiON film 105 is included. In the second step, when oxidizing the Hf-Si film, the Hf-Si film is irradiated with near-ultraviolet light, and the surface layer portion of the Si substrate is oxidized to form the SiO 2 film 104. The wavelength of near-ultraviolet light is 220 to 380 nm. As a near-ultraviolet light source, a Kr 2 excimer lamp, a KrF excimer lamp, a XeCl excimer lamp, or a XeF excimer lamp is used. In the second step, the Hf-Si film is oxidized using oxygen activated by plasma excitation, photoexcitation, or ozone supply. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018512727-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9391158-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076669-B2 |
priorityDate | 2007-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.