http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009152303-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
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filingDate 2007-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65d59aa48cdeac764baa5c454b69768
publicationDate 2009-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009152303-A
titleOfInvention Insulating film formation method
abstract An insulating film that is suitable for use as a high dielectric constant gate insulating film and can achieve both low EOT and low interface states is formed. A first step of forming a Hf-Si film by sputtering on a Si substrate, a second step of oxidizing the Hf-Si film to form a HfSiO film, and nitriding the HfSiO film. A third step of forming the HfSiON film 105 is included. In the second step, when oxidizing the Hf-Si film, the Hf-Si film is irradiated with near-ultraviolet light, and the surface layer portion of the Si substrate is oxidized to form the SiO 2 film 104. The wavelength of near-ultraviolet light is 220 to 380 nm. As a near-ultraviolet light source, a Kr 2 excimer lamp, a KrF excimer lamp, a XeCl excimer lamp, or a XeF excimer lamp is used. In the second step, the Hf-Si film is oxidized using oxygen activated by plasma excitation, photoexcitation, or ozone supply. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018512727-A
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priorityDate 2007-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.