http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009149472-A

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filingDate 2007-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009149472-A
titleOfInvention Method for producing needle crystal and cantilever of scanning probe microscope
abstract [PROBLEMS] To produce a needle-like crystal that can produce a needle-like crystal having a very sharp tip without requiring a material such as Au that causes deterioration of the semiconductor crystal, and to cope with extremely fine irregularities on the surface of an object to be observed. And a cantilever of a scanning probe microscope that can be used. An insulating film forming step for forming an insulating film having a predetermined pattern on a gallium arsenide substrate, and a semiconductor deposition step for depositing GaInP on the gallium arsenide substrate having the insulating film formed thereon by MOCVD. In the deposition step, a GaInP layer 28 is grown in a region on the gallium arsenide substrate 20 excluding a region where the insulating film 26 is formed, and a granular material 30 made of GaInP is generated on the insulating film 26. The needle-like crystal 10 is formed by crystal growth of GaInP along the normal direction of the plate surface of the gallium arsenide substrate 20 using the granular material 30 as a seed crystal. [Selection] Figure 5
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