Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4941 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2009-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10a010fee0ec94d7f8915a5cb4979699 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c038c9afa7b9a859bb5a21b0fd48b6c9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98ea8c724368a73dd849c3d8a4ed6807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_288b29237a43b6c1b30f0e83844c2e14 |
publicationDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2009147377-A |
titleOfInvention |
Semiconductor device and method for manufacturing semiconductor device |
abstract |
A semiconductor device having a small area occupied by a source / drain region and a method of manufacturing the same are provided. A semiconductor device of the present invention is a semiconductor device having an element isolation region and an active region, wherein a part of the source region and the drain region is above a first surface where the active region and the gate oxide film are in contact with each other. A second surface that is present and in contact with the source region and / or the drain region and an electrode electrically connected to the source region and / or the drain region is inclined with respect to the first surface; Yes. [Selection] Figure 5 |
priorityDate |
1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |