| abstract |
Provided are a semiconductor device that prevents corrosion of wiring and vias, has good filling of wirings and vias, and has excellent reliability, and a method for manufacturing the same. A method of manufacturing a semiconductor device according to an aspect of the present invention includes a step of forming an insulating film on a semiconductor substrate, a step of forming a recess in the insulating film, and the insulating film in which the recess is formed. Forming a precursor film containing a predetermined metal element on the surface of the substrate, and performing a heat treatment to cause the precursor film and the insulating film to react with each other, thereby causing the interface between the predetermined metal element and the insulating film. A step of forming an insulating self-forming barrier film mainly comprising a compound containing a constituent element of the film; a step of removing the unreacted precursor film after the formation of the insulating self-forming barrier film; Forming a conductive film made of at least one of Ru and Co on the insulating self-forming barrier film from which the unreacted precursor film has been removed; and depositing a wiring material film on the conductive film; Wiring by flattening the wiring material film And forming a granulation, the. [Selection] Figure 1 |