http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009141089-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
filingDate 2007-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fde4fd988a7ca334d0ca3711f1f0f28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_366c0fbf63526c6a8b6d8595243bfc0e
publicationDate 2009-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009141089-A
titleOfInvention Manufacturing method of semiconductor device
abstract The present invention relates to a bump plating process for forming a gold bump electrode of about 15 to 20 μm in a semiconductor product such as an LCD driver. There is provided a method for preventing the height of the bump from being increased and forming the bump height uniformly on the wafer. In forming a gold bump on a semiconductor wafer by electroplating, an insulating annular shielding plate having an elliptical central opening is disposed between an anode electrode and the wafer. . [Selection] Figure 1
priorityDate 2007-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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