Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec3af9072cf2cdc7a99f55c1775f8091 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
filingDate |
2007-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a14c7fa0582e3ba712e89dc1ce614989 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82d9315c46ba1ade4536738ce82f282a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c505ff983c54d29a7466c1757058f4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb2f0d23a0109ec5654950e35bf8777e |
publicationDate |
2009-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2009141058-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
In a multilayer wiring structure having a barrier film made of a Mn oxide film formed on a surface of a Cu wiring pattern, the life of the wiring is improved. A carbon-containing film serving as a carbon and oxygen source is brought into contact with the surface of a Cu wiring pattern in which a Cu-Mn alloy layer is formed on a side wall, and heat treatment is performed so that Mn atoms and the carbon in the Cu-Mn alloy layer are heated. Carbon atoms and oxygen atoms from the source are reacted to form a Mn oxide film containing carbon as a barrier film. [Selection] Figure 4 |
priorityDate |
2007-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |