http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009137776-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate | 2007-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4e0623a11f80c164bb8f879d0840692 |
| publicationDate | 2009-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009137776-A |
| titleOfInvention | GaAs semiconductor substrate and manufacturing method thereof, and III-V compound semiconductor device and manufacturing method thereof |
| abstract | A GaAs semiconductor substrate capable of obtaining a group III-V compound semiconductor device having high characteristics even when a group III-V compound semiconductor layer containing at least one element of three or more elements is grown on a main surface, and its manufacture Provide a method. A GaAs semiconductor substrate 10 has a main surface 10m having an inclination angle θ of 6 to 16 ° with respect to a (100) plane 10a, and a chlorine atom concentration at the main surface 10m of 1 × 10 13 cm −2 or less. It is. In addition, the manufacturing method of the GaAs semiconductor substrate 10 includes a polishing process for polishing the GaAs semiconductor wafer, a primary cleaning process for cleaning the polished GaAs semiconductor wafer, and the thickness and main surface of the GaAs semiconductor wafer after the primary cleaning. An inspection process for inspecting the roughness of 10 m, and a secondary cleaning process for cleaning the inspected GaAs semiconductor wafer with either an acid or an alkali other than hydrochloric acid. [Selection] Figure 1 |
| priorityDate | 2007-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.