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filingDate 2007-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0189c1514ee4aeec35fd8cfc3bb38297
publicationDate 2009-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009130189-A
titleOfInvention Manufacturing method of semiconductor device
abstract A semiconductor device manufacturing method capable of obtaining a desired threshold value different between a pMOSFET and an nMOSFET is provided. A first metal-containing layer is formed on a first gate electrode layer and a second gate electrode layer, and a film including a photosensitive organic film is formed on the first metal-containing layer. Forming and selectively removing the film including the photosensitive organic film located above the first gate electrode layer to expose a portion located above the first gate electrode layer in the first metal-containing layer The second metal-containing layer 19 is formed on the film including the photosensitive organic film and on the first metal-containing layer, and is contained in the first metal-containing layer and the second metal-containing layer by heat treatment. And reacting the metal with the second gate electrode layer to alloy the second gate electrode layer, and by heat treatment, the metal contained in the first metal-containing layer and the second gate electrode layer To react the second gate electrode layer. [Selection] Figure 2B
priorityDate 2007-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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