| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2007-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a10dfab2d5e98fb721923e318ef1f639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc964a85451abe36ea9bf5eb48e2316a |
| publicationDate |
2009-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009130009-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device and a method for manufacturing the same are provided. In a semiconductor device, a gate structure in which a gate oxide film and a polysilicon layer are sequentially stacked is disposed on a substrate. An oxide film 40 is disposed along the side surface of the gate structure, and an oxide film 50 is disposed along the side surface of the oxide film 40 and the upper surface of the substrate 10. In the sidewall oxide film composed of the oxide films 40 and 50, the minimum thickness of the first layer along the side surface of the gate structure is smaller than the thickness of the second layer along the upper surface of the substrate 10. [Selection] Figure 8 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017204649-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010067785-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015115455-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8237205-B2 |
| priorityDate |
2007-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |