| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2008-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8965f7316c3ab3760109a252d398e97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eae19e0f0b1011c6946253d97fe87423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_060acea6d95ca276a64367cf9542a92f |
| publicationDate |
2009-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009124100-A |
| titleOfInvention |
Group III nitride semiconductor layer manufacturing apparatus, group III nitride semiconductor layer manufacturing method, group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp |
| abstract |
A manufacturing apparatus capable of forming a group III nitride semiconductor layer having excellent crystallinity is provided. A manufacturing apparatus for forming a group III nitride semiconductor layer on a substrate 11 by sputtering, a chamber 41, a target 47 containing a group III element disposed in the chamber 41, a target 47, a first plasma generating means 51 for generating a first plasma for supplying raw material particles to the substrate 11, a second plasma generating means 52 for generating a second plasma containing a nitrogen element, and a first plasma generating means. 51 is a group III nitride semiconductor layer manufacturing apparatus including a control unit that controls the first plasma generation unit 52 and the second plasma generation unit 52 to alternately generate the first plasma and the second plasma in the chamber 41. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5444460-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9252322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101484658-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I449215-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022070922-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018535329-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012216734-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011136016-A1 |
| priorityDate |
2007-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |