http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009120425-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
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filingDate 2007-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b6667c5c640c1b54c2f6fc02fcc123f
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publicationDate 2009-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009120425-A
titleOfInvention GaN semiconductor substrate manufacturing method and GaN semiconductor substrate
abstract A method of manufacturing a GaN semiconductor substrate capable of producing a nonpolar plane GaN crystal of good quality is provided. A step of forming a layer made of a carbide selected from the group consisting of titanium carbide, zirconium carbide, hafnium carbide, niobium carbide, vanadium carbide and tantalum carbide on a base substrate 10 and a step of nitriding the carbide layer A step of epitaxially growing a GaN crystal on the nitrided carbide layer 12 with a nonpolar surface as a growth surface to form a nonpolar surface GaN crystal layer 16; and removing the base substrate 10 to remove the nonpolar surface And a step of obtaining a GaN semiconductor substrate including the GaN crystal layer 16. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016008166-A
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