http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009120425-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_25ba42e5f214f100f81e5e2016f045ce |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
filingDate | 2007-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b6667c5c640c1b54c2f6fc02fcc123f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca2c7ff6f53eb05689eb4853b393b9b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f24b6ab6131f96b9d6b3972bc9ba57db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6a350fabba05e48f5e62ec6f6d0261b |
publicationDate | 2009-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2009120425-A |
titleOfInvention | GaN semiconductor substrate manufacturing method and GaN semiconductor substrate |
abstract | A method of manufacturing a GaN semiconductor substrate capable of producing a nonpolar plane GaN crystal of good quality is provided. A step of forming a layer made of a carbide selected from the group consisting of titanium carbide, zirconium carbide, hafnium carbide, niobium carbide, vanadium carbide and tantalum carbide on a base substrate 10 and a step of nitriding the carbide layer A step of epitaxially growing a GaN crystal on the nitrided carbide layer 12 with a nonpolar surface as a growth surface to form a nonpolar surface GaN crystal layer 16; and removing the base substrate 10 to remove the nonpolar surface And a step of obtaining a GaN semiconductor substrate including the GaN crystal layer 16. [Selection] Figure 2 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016008166-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102969420-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8928004-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013055319-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011073894-A |
priorityDate | 2007-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.