http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009114467-A

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filingDate 2006-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f28bad8dc106de03b696d4082ffcae0
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publicationDate 2009-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009114467-A
titleOfInvention Method for forming metal-containing structure and method for forming metal-containing laminate
abstract A method for forming a novel metal-containing structure, which solves various problems caused by sputtering and plating methods that have been used in conventional device fabrication, and is the basis for fabrication of nanoscale ultra-miniaturized devices Furthermore, the present invention provides a novel method for forming a metal-containing laminate obtained by developing this method. (R-C≡C − −M + ) m , or ((R−C≡C − ) 2 −M ′ 2+ ) n, where M = Cu, Ag or Au, M ′ = Fe, Co or Ni, m and n are integers, R is an organometallic acetylide cluster having the form of a methyl (—CH 3 ) group or tertiary butyl (a hydrocarbon group such as —C (CH 3 ) 3 ) group) Preparing a compound, irradiating the organometallic acetylide cluster compound with light, photoexciting the organometallic acetylide cluster compound to generate an ethynyl anion and a metal cation, and the ethynyl anion and the metal cation Neutralization occurs through charge transfer between them, generating metal atom clusters. [Selection] Figure 1
priorityDate 2006-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.