| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-60 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01F17-235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B13-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01F17-235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate |
2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56d291aa4859ae2a8cd53674557ffe56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01cd19963303720d983c66c36402f1e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6b53c47200b827d6e5b29d55d4e70b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53bf8b9b96212de5fd97b7d343f5e5d9 |
| publicationDate |
2009-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009113993-A |
| titleOfInvention |
Metal oxide particles, abrasive containing the same, substrate polishing method using the abrasive, and semiconductor device manufacturing method obtained by polishing |
| abstract |
PROBLEM TO BE SOLVED: To provide metal oxide particles capable of performing CMP capable of preventing or reducing the occurrence of polishing scratches on a silicon oxide film, a metal buried film, etc., an abrasive containing the same, and a method for polishing a substrate using the abrasive And a method of manufacturing a semiconductor device obtained by polishing. SOLUTION: A metal oxide fine particle produced by heat-treating a metal compound at 1000 ° C. or more and having a crystallite size of 30 nm or more and a crystal strain of 1% or less, an abrasive containing the metal oxide fine particle, A polishing method for polishing a predetermined substrate using the polishing material, and a method for manufacturing a semiconductor device, wherein a semiconductor chip on which a silicon oxide film is formed is polished with the polishing material. A method of manufacturing a conductor device comprising polishing a method or a semiconductor chip on which a metal film is formed with the above-mentioned abrasive. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102007448-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013051104-A |
| priorityDate |
2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |