| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2008-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e0ae01e2bc0bcab67024c29f341b739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_feb4eeea50bac514efdd1d5791d90249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c2e3c5bbfa5918befec47696bf35dc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3e0d69af7f90d3c34d6d46e05fdda36 |
| publicationDate |
2009-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009111373-A |
| titleOfInvention |
Method for manufacturing SOI substrate |
| abstract |
An object of the present invention is to provide a method for manufacturing an SOI substrate including a semiconductor layer that can withstand practical use even when a substrate having a low heat resistant temperature such as a glass substrate is used. A semiconductor substrate having a bonding layer formed on a surface thereof and a release layer formed at a predetermined depth and a base substrate having a strain point of 700 ° C. or less are prepared. The surface of the semiconductor substrate and the surface of the base substrate The surface of the bonding layer is bonded to the base substrate, and heat treatment is performed to separate a part of the semiconductor substrate with the bonding layer as a boundary to form a single crystal semiconductor layer over the base substrate. In addition, as the base substrate, a substrate that isotropically contracts at least before and after the heat treatment is used. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012054539-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016039541-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9624597-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013008968-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014200827-A1 |
| priorityDate |
2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |