| abstract |
The present invention provides a production method in which the amount of crystallization of a 2H silicon carbide single crystal does not vary, and a 2H silicon carbide single crystal with stable quality. A ratio M between the number of moles of lithium (A) and the number of moles of silicon (B) of a melt of silicon and carbon source prepared in a lithium flux is a ratio M = B / (A + B) × 100 ( %), Using 2 lithium acetylide (Li2C2) as a carbon source, and performing 2PE silicon carbide single crystal LPE growth (liquid phase epitaxial growth) on the surface of the silicon carbide single crystal seed substrate, high SiC A yield is obtained. [Selection] Figure 3 |