http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009105083-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_905122d8678a831c0f8af203f34145dc |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2007-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f91c494f733b08ff76c2deb99d674f18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3672f20326fcb9001baf40756c17d851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad8d54446a5ddb9d23f536b8c10167fc |
| publicationDate | 2009-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009105083-A |
| titleOfInvention | Thin film transistor manufacturing method and thin film transistor manufactured by the manufacturing method |
| abstract | A method for manufacturing a thin film transistor in which a source electrode, a drain electrode, and a semiconductor layer have good conduction characteristics and a thin film transistor manufactured by the manufacturing method are provided. A gate electrode is formed on an upper surface of a substrate of a thin film transistor, and a gate insulating layer is provided so as to cover the gate electrode. A source electrode 3, a drain electrode 4, and a semiconductor layer 7 are provided on the upper surface of the gate insulating layer 5. On the gate insulating layer 5 between the source electrode 3 and the semiconductor layer 7, an end portion of the source electrode 3 and Silver nano-ink 9 is applied and electrically connected (contacted) so as to cover the end of the semiconductor layer 7. Also, silver nano-ink 10 is applied on the gate insulating layer 5 between the drain electrode 4 and the semiconductor layer 7 so as to cover the end portion of the drain electrode 4 and the end portion of the semiconductor layer 7 to be electrically connected ( Contact). [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016181964-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8796768-B2 |
| priorityDate | 2007-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.