| abstract |
Provided is a positive resist composition having improved pattern collapse performance and focus margin and having good exposure latitude even in the formation of a fine pattern of 100 nm or less, and a pattern forming method using the same. (A) A resin having an acid-decomposable repeating unit having a specific tertiary ester structure, which increases the solubility in an alkali developer by the action of an acid, and (B) an acid upon irradiation with actinic rays or radiation. And (C) a positive resist composition containing a compound that generates a compound having a proton acceptor functional group having a specific structure upon irradiation with actinic rays or radiation, and a pattern forming method using the same. [Selection figure] None |