| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T137-8593 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45514
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2007-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03cf2ffcae3742c4f537a63e1eb67d04 |
| publicationDate |
2009-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009088229-A |
| titleOfInvention |
Film forming apparatus, film forming method, storage medium, and gas supply apparatus |
| abstract |
Provided is a film forming apparatus capable of obtaining high in-plane uniformity with respect to film thickness and film quality in performing film forming processing by supplying three types of processing gases to a substrate from a gas supply surface facing the substrate. To do. [Solution] A first processing gas, a second processing gas, and a third processing gas different from each other are supplied from a gas supply surface 40a of a gas shower head facing the substrate to a substrate provided in a processing container of the film forming apparatus. Then, these processing gases are reacted to form a thin film on the surface of the substrate. The gas supply surface 40a is divided into unit sections 401 made of equilateral triangles having the same size, and a first processing gas is supplied to the three vertices of each equilateral triangle constituting the unit section 401. The gas supply hole 51b, the second gas supply hole 52b for supplying the second processing gas, and the third gas supply hole 53b for supplying the third processing gas are allocated. [Selection] Figure 7 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112513324-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2020031778-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6702514-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013502747-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020110406-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2236569-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017216391-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016164994-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020031778-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11306396-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014512458-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020014004-A |
| priorityDate |
2007-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |