| abstract |
An object of the present invention is to improve the density of a target for a P-type transparent conductive material mainly composed of oxychalcogenide containing La and Cu, to increase the size of the target and to produce it at low cost, and to react unreacted in the target. By eliminating the presence of objects and suppressing the occurrence of cracks in the target, the product yield is increased and the quality of film formation is further improved. One or more kinds of powders selected from simple substances, oxides or chalcogenides of constituent elements are used as raw materials, excluding gas components, the raw material powder for sintering has an average particle size of 50 μm or less, and a specific surface area of 0.2 m. 2 / g or more, including a reaction step of holding at a temperature of 850 ° C. or lower for 1 hour or longer during the sintering step, and baking at a temperature of 500 to 1000 ° C., which is a temperature higher than the reaction step temperature, after this reaction step. The manufacturing method of the sputtering target which has as a main component the oxychalcogenide containing La and Cu which are 90% or more of relative density by linking. [Selection figure] None |