| abstract |
A high dielectric thin film capacitor having an upper electrode and a lower electrode on the upper and lower surfaces of a niobium oxide thin film and / or a tantalum oxide thin film having a large relative dielectric constant and a small leakage current is provided. On the lower electrode, the general formula (1) M 1 (NR 1 ) (OR 2 ) 3 (1) (In the formula, M 1 represents a tantalum atom or a niobium atom, R 1 represents an isopropyl group or a tert-butyl group, and R 2 represents a tert-butyl group.) A thin film is formed by the ALD method or the ALD method, and an upper electrode is formed on the thin film to obtain a high dielectric thin film capacitor. [Selection] Figure 2 |