| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8ea28e424d31caf00e66a26743cdff6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b999abe8720ff997a2b357dfaa6cea0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5cb92d88cb55bcd1c94dd3daf2c30a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461a26123a13b3df747366f6b41dbe2c |
| publicationDate |
2009-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009081383-A |
| titleOfInvention |
Display device provided with thin film semiconductor element and method for manufacturing thin film semiconductor element |
| abstract |
A highly reliable active matrix display device capable of high-speed operation is provided. An amorphous Si film is formed on a Si nitride film and a Si oxide film formed on an insulating substrate. The amorphous Si film 104 is dehydrogenated ((a) in FIG. 1). By irradiating the amorphous Si film 104 with UV light simultaneously with annealing with a carbon dioxide laser, a crystallized Si film having a crystallization rate of 90% or more and a surface unevenness difference of 10 nm or less can be obtained (FIG. 1 ( c)). A semiconductor element such as a thin film transistor for a display device is formed using the crystallized Si film. Annealing with only a carbon dioxide laser requires substrate heating at 350 ° C. or higher in order to obtain a crystallized Si film having a crystallization rate of 90% or higher ((b) in FIG. 1). [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102576428-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011221072-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011165717-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170124128-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022106953-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012156390-A |
| priorityDate |
2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |