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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
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filingDate 2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc22f80f2706e798b649a4815b4a1759
publicationDate 2009-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009076905-A
titleOfInvention Semiconductor device
abstract [PROBLEMS] To manufacture a semiconductor device that can be produced efficiently at a low temperature in a short time. To the law Providing high-quality, high-performance semiconductor devices manufactured more. [Solution] Any selected from the group consisting of a substrate provided with ITO on the surface, a silicon substrate, and an aluminum substrate And one or more elements selected from group IIIA elements in the periodic table and a nitrogen atom With hydrogen And a film made of a nitride compound that generates photoluminescence at the band edge at room temperature . [Selection figure] None
priorityDate 1998-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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