| abstract |
An in-situ construction of a highly conformal diffusion barrier with improved resistivity is performed. In one embodiment of the present invention, a processing chamber, a shower head, a wafer support, and RF signal means may be included. By providing a shower head, gas is supplied into the processing chamber. A wafer support is provided for supporting the wafer within the processing chamber. RF signal means may be coupled to both the showerhead and the wafer support to provide a first RF signal to the showerhead and a second RF signal to the wafer support. Alternatively, the RF signal means may be coupled only to the wafer support to provide an RF signal to the wafer support. By implementing the embodiments of the present invention, the ability of the diffusion barrier to prevent the diffusion of contact metals such as aluminum and copper can be improved. [Selection] Figure 1 |