| abstract |
An yttria ceramic-based sprayed film used for a plasma processing apparatus member for manufacturing semiconductors and liquid crystals, etc., having improved corrosion resistance against chlorine-based plasma. Provided is a plasma-resistant ceramic sprayed film capable of suppressing impurity metal contamination caused by constituent raw materials. SOLUTION: Zirconia is dispersed in yttria in an amount of 0.5 to 50% by weight with respect to yttria, and alumina is dispersed in an amount of 3 to 30% by weight with respect to yttria, and the open porosity is 2% or less. A ceramic sprayed film is formed. [Selection figure] None |