http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009065192-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_347b5a7147a5d96032eda0149bc9a798 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 |
| filingDate | 2008-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a6685fdd85bf1149ce1bebdd5c7b61d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c45526f78af7280cb871a58da3d37cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1674401a0057ad2b381f3eaaa5b6f8cc |
| publicationDate | 2009-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009065192-A |
| titleOfInvention | Manufacturing method of silicon film and silicon nitride film |
| abstract | A heating element CVD in which a source gas introduced into a processing container (vacuum chamber) is decomposed and / or activated by a heating element to deposit a thin film on a substrate disposed in the processing container (vacuum chamber). In the apparatus, there is provided a heating element CVD method in which the life of the heating element is extended and the fixing method of the heating element is improved, and the productivity is improved. A connecting portion 33 in which a heating element 3 is connected to a power supply mechanism and / or a supporting portion in which the heating element 3 is supported by a support 31 is provided with a gap between the connecting portion 33 and the supporting portion. A heating element CVD apparatus provided with a gas introduction mechanism 321 that can be present and covered with a cover without coming into contact with the heating element 3 and can introduce gas into a gap between the cover, the connection portion 33 and the support portion is used. The purge gas is introduced into the end of the heating element 3 inserted into the heating element insertion port provided in the connection portion 33. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013168747-A1 |
| priorityDate | 2008-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.