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publicationDate 2009-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009059807-A
titleOfInvention Magnetic tunnel element, semiconductor device using the same, and manufacturing method thereof
abstract An MTJ element that enables writing in a reset / set state in addition to a binary value in a spin parallel / antiparallel state. A magnetic tunnel element includes a pair of ferromagnetic layers and a tunnel barrier layer sandwiched between the ferromagnetic layers, and has a first resistance state and a resistance higher than that of the first resistance state. Between a first function that transitions between second resistance states, a third resistance state that is lower in resistance than the first resistance state, and a fourth resistance state that is higher in resistance than the second resistance state. And a second function for transitioning. [Selection] Figure 2
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