http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009058791-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9afd626b14ef4bfd1a0cbc8b5bae6a13 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2007-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cf4cb0b6b3699b6c4ca97ae9f8e6642 |
| publicationDate | 2009-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009058791-A |
| titleOfInvention | Electronic component and display device |
| abstract | An electronic component formed by using an efficient pattern forming method, particularly a display device. First etching using a first resist pattern 9 as a mask is performed on a substrate in which a gate insulating film 5, a semiconductor film 6, a contact film 7, and an upper metal film 8 are laminated on a gate pattern. The upper metal film 8 and the contact film 7 are removed, the data pattern including the drain electrode 10, the source electrode 11, the data terminal 12, and the data wiring 13 and the channel portion of the transistor are formed, and the second resist pattern 14 is formed on the channel. In the second etching using the first resist pattern 9 and the second resist pattern 14 as a mask, the first resist pattern 9 on both sides of the part is transferred so as to overlap at least partly and cover the channel part. Then, a method of manufacturing a thin film transistor is used in which the semiconductor film 6 is removed to expose the gate insulating film 5 and the semiconductor film 6 is processed into an island shape. [Selection] Figure 1 (d) |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014083746-A |
| priorityDate | 2007-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.