| abstract |
By using a polishing liquid having a low abrasive concentration and a low metal anticorrosive concentration, a conductor used for a barrier layer can be polished at a high polishing rate in a wiring formation process of a semiconductor device. An abrasive, a metal oxidizer, a metal anticorrosive, a metal oxide solubilizer, and water, The metal oxide solubilizer is at least one selected from an acid having a pKa of the first dissociable acidic group of 3.5 or more, an ammonium salt of the acid, and an organic acid ester of the acid, The pH of the polishing liquid is 3-4, The abrasive is a polishing liquid having an average particle size of 70 nm or less determined from a light diffraction / scattering particle size distribution analyzer. [Selection figure] None |