| abstract |
Specific mechanical properties (strain, elastic modulus, hardness, cohesive strength, underwater cracking) that provide a stable ultra-low-k film containing Si, C, O and H elements and not deteriorated by water vapor or integration treatment A dielectric material having a (speed) value is provided. The dielectric material has a dielectric constant of about 2.8 or less, a tensile stress of less than 45 Mpa, an elastic modulus of about 2 to about 15 GPa, and a hardness of about 0.2 to about 2 GPa. Have. In addition, electronic device structures that include the dielectric material, as well as various methods of manufacturing the dielectric material, are also disclosed. [Selection] Figure 6 |