http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009044011-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 |
| filingDate | 2007-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_038cb559445ead07d8b0130b928fe3e4 |
| publicationDate | 2009-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009044011-A |
| titleOfInvention | Vapor phase growth method and vapor phase growth apparatus |
| abstract | Provided are a vapor phase growth method and a vapor phase growth apparatus capable of easily reducing impurity contamination such as oxygen in an epitaxial layer. A substrate (4) is installed in a growth furnace (1) using a growth tool (3, 5), and a necessary group III material, group V material, In the vapor phase growth method in which a diluting gas and a dopant raw material are supplied and an epitaxial layer of a compound semiconductor is laminated and grown on a substrate (4), the growth apparatus (3, 5) has a bulk density of 1.80. A carbon material in the range of ˜1.85 Mg / m 3 is used. [Selection] Figure 1 |
| priorityDate | 2007-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.