http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009043866-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate | 2007-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6a57ffbbb8ee226c46e18a23c258d31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb178ba57536e5773da27ab835177e8 |
| publicationDate | 2009-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009043866-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A semiconductor device that realizes a stable current gain by suppressing current leakage and parasitic resistance is provided. A first semiconductor layer is grown on an n-type collector layer and a p-type exposed on a lower surface of a collar portion made of a laminated film including a p-type polycrystalline silicon film and a silicon nitride film. A first polycrystalline semiconductor layer 120 is grown below the polycrystalline silicon film 106, and then the first polycrystalline semiconductor layer 120 is selectively removed. Further, while the second semiconductor layers 112 and 114 and the third semiconductor layer 116 are grown, the second polycrystalline semiconductor layers 122 and 124 and the second polycrystalline semiconductor layers 122 and 124 are formed below the p-type polycrystalline silicon film 106 exposed on the lower surface of the collar portion. The third polycrystalline semiconductor layer 126 is selectively grown so as not to contact the silicon nitride film 108, and the third semiconductor layer and the third polycrystalline semiconductor layer are brought into contact with each other. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9966438-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018052478-A3 |
| priorityDate | 2007-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.