http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009043332-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec3af9072cf2cdc7a99f55c1775f8091 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2029-5602 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2029-5006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-401 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-4091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-56 |
| filingDate | 2007-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4761b572d69e9de2249b1180ffa1117c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56faabcd489fc8f6aac31c48959eb0ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d56a792d81ffcb3a54a6006f8fca4c82 |
| publicationDate | 2009-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009043332-A |
| titleOfInvention | Semiconductor memory, semiconductor memory test method and system |
| abstract | PROBLEM TO BE SOLVED: To detect and repair a memory block defect without increasing a chip size. Each program circuit outputs an operation specification signal indicating a first or second operation specification according to a program state. Each specification change circuit is set by a corresponding block selection signal and outputs an operation specification signal indicating the second operation specification. Each timing control circuit changes the output timing of the precharge control signal for the bit line according to the operation specification signal. A failure can be detected for each memory block before the program circuit is programmed by the operation specification signal from the specification change circuit. Thereafter, the defect can be relieved by the program circuit. The output timing of the precharge control signal can be set for each memory block by a block selection signal without wiring a dedicated signal line for setting each specification changing circuit. For this reason, an increase in chip size can be minimized. [Selection] Figure 4 |
| priorityDate | 2007-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.