http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009038193-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate | 2007-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8874fdb6f4a10c68893ce791f961401c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7836fca911bdb0e4d5599ce4a315166c |
| publicationDate | 2009-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009038193-A |
| titleOfInvention | Quantum dot semiconductor laser |
| abstract | In a quantum dot semiconductor laser, a semiconductor laser having excellent single mode characteristics and a narrow spectral line width can be realized. A quantum dot semiconductor laser is formed such that a semiconductor substrate, a quantum dot having a TM mode gain at a ground level greater than a TE mode gain, and a quantum dot are connected to the quantum dot. An active layer 6 having a semiconductor layer 21 made of a semiconductor material having a composition and a diffraction grating are provided. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012134384-A |
| priorityDate | 2007-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.