| abstract |
A crystalline silicon thin film having a stable crystallization rate in the film thickness direction can be formed on a substrate while maintaining the film formation rate even at a low substrate temperature. Provided is a method for manufacturing a thin film semiconductor device in which direct film formation of a silicon thin film is put into practical use in industry and high performance is achieved by using this silicon thin film. A silicon thin film having a crystal structure is formed by plasma CVD using a higher order silane-based gas represented by Si n H 2n + 2 (n = 2, 3,...) And a hydrogen gas as a film forming gas. Is performed on the substrate. Further, as a pre-process, in the nucleation process, a reactivity using a higher order silane gas represented by Si n H 2n + 2 (n = 2, 3,...) And a germanium halide gas as a film forming gas. A nucleation step S1 for generating crystal nuclei on the substrate is performed by a thermal CVD method or a plasma CVD method. [Selection] Figure 1 |