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filingDate 2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009029706-A
titleOfInvention Tin oxide powder for ITO sputtering target, method for producing the same, sintered sputtering target for forming ITO film, and method for producing the same
abstract Kind Code: A1 To provide a tin oxide powder capable of obtaining a sintered body having high density and excellent component uniformity suitable for forming an ITO thin film, and a sputtering target for forming an ITO film sintered using the powder. Accordingly, the present invention provides a tin oxide-indium oxide target for forming an ITO film that can suppress nodules generated during the formation of the ITO thin film and the accompanying deterioration of the quality of the thin film at a low cost. ITO sputtering characterized in that the median diameter determined from the particle size distribution is in the range of 0.40 to 1.0 μm and the 90% particle diameter determined from the particle size distribution is in the range of 3.0 μm or less. Tin oxide powder for target. [Selection] Figure 1
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