http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009027003-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2007-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4529d5e835146e67078546c7db7b70c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc9a256cc322f67809ef457d869c955c |
| publicationDate | 2009-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009027003-A |
| titleOfInvention | Semiconductor laser device and manufacturing method thereof |
| abstract | The present invention provides a semiconductor laser device in which deterioration of characteristics is prevented by suppressing distortion and a method for manufacturing the same. In a semiconductor laser device 100, a region around an active layer 5 above a ridge Ri is an optical waveguide region LP. A protrusion 21 is formed on the optical waveguide region LP. The protrusion 21 has GaN as a main component. Therefore, the thermal expansion coefficient of the protrusion 21 and the thermal expansion coefficient of the GaN semiconductor layer 20 are substantially equal. In this case, the presence of the protrusion 21 reduces the stress per unit volume generated in the peripheral portion of the optical waveguide region LP when the semiconductor laser element 100 is thermally expanded. [Selection] Figure 7 |
| priorityDate | 2007-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.