http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009021533-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c468e687b43595cae7cb1c2667678f1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4586 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4402 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2007-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b6851174452674e5efdd3d1199f57eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_928f17f8c71bc2e85945e9919d5616f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f91c445131c384170d6232286a956ca |
| publicationDate | 2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009021533-A |
| titleOfInvention | Vapor growth apparatus and vapor growth method |
| abstract | Disclosed are a vapor phase growth apparatus and a growth method that reduce particle generation and deposits in epitaxial growth and facilitate the improvement of productivity. A gas supply port 12 at the top of a processing furnace 11, a gas rectifying plate 13 inside, an exhaust port 14 at the bottom, a gas rectifying plate 13 mounted on the head, a liner 15 covering the side wall of the processing furnace 11, a semiconductor wafer W Is provided with an annular holder 16, a rotating unit 17 for rotating the annular holder 16, and a heater 18 for heating the semiconductor wafer W. The rotary unit 17 is integrated with a hollow rotary shaft 17a, and the heater 18 is fixed on a support base 20 of a support shaft 19 penetrating through the rotary shaft 17a. The separation distance between the gas rectifying plate 13 and the annular holder 16 is such that the film-forming gas 21 flowing down from the gas supply port 12 through the gas rectifying plate 13 is in a rectifying state on the semiconductor wafer W surface or the annular holder 16 surface. Is set. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10316429-B2 |
| priorityDate | 2007-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.