http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009019222-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 |
| filingDate | 2007-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01f21a535a623a7510c46bd674bcc67f |
| publicationDate | 2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009019222-A |
| titleOfInvention | Method for forming zinc oxide film |
| abstract | A zinc oxide film having a desired characteristic state can be more stably formed by a reactive sputtering method using a metal target. When the supply of oxygen gas into the ECR sputtering apparatus is started and an oxide layer is formed on the surface of the metal Zn target, it is confirmed that the decrease in the absolute value of the measured target potential has stopped. Then, the supply of oxygen gas is stopped, and then the shutter is opened so that a ZnO 1-x transparent conductive film (zinc oxide film) 102 is formed on the substrate 101. Thereafter, when the amount of change of the measured target potential from the measurement start time becomes equal to or less than a preset value, the shutter is closed. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011241471-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101113123-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012164797-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010140654-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102010005891-A1 |
| priorityDate | 2007-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.