| abstract |
A novel semiconductor device in which FeRAM and a specific sensor are mixedly mounted is provided. A semiconductor device according to the present invention is formed above a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer insulating layer covering the transistor, and an interlayer insulating layer. A ferroelectric capacitor 30 having a first electrode 34, a ferroelectric layer 36, and a second electrode 38, and the interlayer insulation covering the ferroelectric capacitor 30. An interlayer insulating layer 40 different from the layer 16 and a sensor 100 formed above the semiconductor substrate 10 and which is one of a pressure sensor, a pyroelectric sensor, and a magnetic sensor are included. [Selection] Figure 1 |