| abstract |
Provided is a chemical vapor deposition method using a heating element which prevents impurities from being mixed into a thin film to be produced. A source gas supplied by a gas supply system to a processing container is decomposed and / or activated on the surface of a heating element maintained at a high temperature of about 1500 to 1900 ° C. by an energy supply mechanism. A thin film is formed on the surface 9. The heating element 3 is a wire made of a refractory metal such as tungsten, and has a high temperature treatment that is maintained at a temperature of about 2000 to 3000 ° C., which is higher than the temperature at which the thin film is formed, in a vacuum of about 1 × 10 −6 to 1 Pa for 5 minutes or more. After being applied, it is installed in the processing container 1. Heavy metals mixed during the formation of the heating element 3 and the like are released in advance by high-temperature treatment, and mixing into the thin film is less than 1 × 10 17 atoms / cc. [Selection] Figure 1 |