| abstract |
The present invention provides a NOR flash device and a manufacturing method thereof. In a NOR flash device having a back-end-of-line (BEOL) structure, the BEOL structure includes a substrate having a conductive region, a first interlayer insulating film formed on the substrate, and a first metal formed in the conductive region. A second metal layer connected to the first metal line through the line, a second interlayer insulating film covering the first metal line and the first interlayer insulating film, a first contact penetrating the second interlayer insulating film, and the first contact. And at least one of the first contact and the first and second metal lines is copper, and at least one of the first and second interlayer insulating layers includes a low dielectric material. [Selection] Figure 2 |