| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2008-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dec4d1ff9bbf4d655bc09a747cbae06 |
| publicationDate |
2009-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009010353-A |
| titleOfInvention |
Semiconductor substrate manufacturing method and semiconductor device |
| abstract |
A large SOI substrate is obtained by providing a single crystal silicon layer over a large glass substrate over a large area. A plurality of rectangular single crystal semiconductor substrates provided with separation layers are aligned on a dummy substrate and fixed with a low-temperature coagulant, and then the plurality of single crystal semiconductor substrates are bonded to a support substrate to reduce the temperature. The dummy substrate and the single crystal semiconductor substrate are separated by raising the temperature to a temperature that does not have the adhesive effect of the coagulant, and heat treatment is performed to separate a part of the single crystal semiconductor substrate with the separation layer as a boundary, and a large substrate that is a support substrate A single crystal silicon layer is provided over a glass substrate. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100085840-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101661705-B1 |
| priorityDate |
2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |