| abstract |
In a compound semiconductor device in which a nanoscale columnar crystal structure is formed on a substrate or a buffer layer, the reliability is improved and the formation of an upper electrode is facilitated. As shown in (a), an n-type GaN layer 2 serving as a buffer layer for extracting an n-type electrode is grown on a sapphire substrate 1 which is an insulating substrate, and SiO 2 which is an insulating film is further grown. The thin film 4 is deposited to form the opening 5. Then, as shown in (b), after growing the GaN: Zn nanocolumn 6 using the n-type GaN layer 2 exposed in the opening 5 as a seed crystal, an aqueous solution containing the organometallic PEDOT: PSS is spin-coated, By baking, the p-type layer 7 is formed as shown in FIG. Therefore, as shown in (d), the n-type GaN layer 2 connected to the n-type electrode 10 and the p-type layer 7 connected to the p-type transparent electrode 8 are electrically insulated to prevent leakage and short circuit. Thus, the reliability can be improved and the upper electrode 8 can be easily formed. [Selection] Figure 1 |