| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate |
2007-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fcfb8235f3e5ea4dc34cec7b3da6055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c25a526f11a680fd7054e3ecff4ff31c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20b681d9984f162848ed273dc5289705
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6204811a73099ce239a131721208c27c |
| publicationDate |
2009-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009004645-A |
| titleOfInvention |
Nitride-based semiconductor laser device and manufacturing method thereof |
| abstract |
A nitride semiconductor laser device having a buried layer having high thermal conductivity and low film stress is provided. The present invention relates to a nitride-based semiconductor laser device having a ridge stripe structure, wherein the ridge stripe has a buried layer made of aluminum oxynitride AlO x N y (y = 1−2x / 3). It is characterized by. [Selection] Figure 17 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8130805-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018180524-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012186336-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012134293-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8649408-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018180524-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012101686-A1 |
| priorityDate |
2007-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |