abstract |
Polishing that is suitable for chemical mechanical polishing (CMP) of semiconductor components such as semiconductor substrates and interlayer insulating films, recording medium components and optical components, etc., and makes the surface of the object to be polished flat and the polishing rate can be increased. A composition for polishing and a polishing method are provided. At least an abrasive, and (a) a monomer having a sulfonic acid (salt) group, a monomer having a carboxylic acid (salt) group, a monomer having a hydroxyl group, and ethylene oxide or propylene oxide Copolymer obtained by copolymerizing at least one monomer selected from the group of monomers having a derived skeleton, and (b) a monomer having a nitrogen atom Polishing composition containing the grinding | polishing adjuvant which consists of a cleaning agent for semiconductor components which has (salt) as a main component. [Selection figure] None |