| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2005-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2008-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008545061-A |
| titleOfInvention |
Novel deposition method for ternary films |
| abstract |
Metal sources not containing metal-C or metal-N-Cσ bonds (eg TaCl 5 , SEt 2 ), silicon precursors (eg SiH (NMe 2 ) 3 or (SiH 3 ) 3 N), ammonia Introducing a nitrogen precursor such as carbon precursor such as monomethylamine or ethylene and a reducing agent (eg H 2 ) into the CVD chamber and reacting the same on the surface of the substrate to form a metal-containing film in a single step The manufacturing method of the metal containing film | membrane by manufacturing. [Selection] Figure 9 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016536276-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11780859-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013140946-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11274112-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022172957-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10494387-B2 |
| priorityDate |
2005-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |