http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008534930-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-26
filingDate 2006-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008534930-A
titleOfInvention Characterization techniques for dielectric properties of polymers
abstract Test structures for polymer characterization have been disclosed over a wide frequency range and temperature range under a DC electric field. A high resistance silicon substrate (40) is disposed by an adhesive layer (30). A polymer thin film (20) is placed on the patterned metal layer placed on top of the adhesive layer. The top metal bilayer is disposed on a polymer thin film and patterned to form a CPW transmission line. A single bias voltage is applied to the center conductor of the metal-2 CPW transmission line, affecting the dielectric properties of the polymer. The dielectric properties and loss-tangent of a polymer are determined by measuring the dielectric frequency and loss tangent of a polymer thin film by measuring the swept frequency scattering parameter (S-parameter) and matching the experimental frequency response to the model frequency response. Derived as a function of The properties of polymer electrical conductors can also be accurately defined by using test structures over a wide temperature range. [Selection] Figure 2d
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Total number of triples: 31.