| abstract |
The present invention relates to a method for manufacturing a semiconductor device. In this method, the semiconductor device comprises a substrate (10), which is covered with a low-k precursor layer (20) having a surface (25). After this step, a partial curing step is performed to form a dense layer (30) at or near the surface (25) of the low-k precursor layer (20). This dense layer (30) can act as a protective layer (30). The low-k precursor layer (20) is selected from the group of materials having properties that can be applied in an uncured or partially cured state. The main advantage of this method is that the dense layer (30) is formed from the low-k precursor layer (20) itself, so that a separate protective layer (30) is formed with a low-k precursor layer ( 20). Accordingly, the dense layer (30) has good adhesion to the low-k precursor layer (20). |